Growth of graphene films from non-gaseous carbon sources
US9096437B2 · kind B2 · utility
26Cited by
1References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2012 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Mar 28, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2204/04
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.