Patent · US Active

Luminescent element including nitride, preparation method thereof and luminescence method

US9096792B2 · kind B2 · utility

1Cited by
9References
3Claims
0Family size

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Key dates

Filing dateAug 26, 2009
Grant dateAug 4, 2015
Priority date
Expiry dateNov 3, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/31678
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A luminescent element including nitride includes a luminescent film and a metal layer with a metal microstructure formed on a surface of the luminescent film; wherein the luminescent film has a chemical composition: Ga1-xAlxN:yRe, wherein Re represents the rare earth element, 0≦x≦1, 0<y≦0.2. A preparation method of a luminescent element including nitride and a luminescence method are also provided. The metal layer is formed on the surface of the luminescent film, and the luminescent element including nitride has simple structure, good luminescence homogeneity, high luminescence efficiency, and good luminescence stability.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.