Low volumetric density betavoltaic power device
US9099212B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 10, 2012 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Aug 10, 2033 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61N1/378
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
One example is a betavoltaic cell that has been fabricated using a semiconductor that includes, but is not limited to, Silicon Carbide (SiC), Silicon (Si), Gallium Arsenide (GaAs), Indium Gallium Arsenide (InGaAs), Gallium Nitide (GaN), Gallium Phosphide (GaP), or Diamond, and uses through wafer via holes or other fabrication techniques to form both positive (+ve) and negative (−ve) contacts on the front and back sides of the cell. In another example, several of these cells with +ve and −ve contacts on the front and back sides of the cell are arranged vertically and/or horizontally to form customized parallel and/or series combinations that produce a close packed, energy dense betavoltaic composite unit, with increased power outputs relative to a single cell. In another example, tritium or a metal tritide is used as the radioisotope source for the cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.