Fabrication for electroplating thick metal pads
US9099344B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2010 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Nov 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of electroplating includes forming a seed region to be electroplated on a first portion of a substrate, forming a ground plane on a second portion of a substrate, electrically isolating the ground plane from the seed region, electroplating the region, wherein electroplating includes causing the ground plane and the region to make electrical connection, and then removing the ground plane region on the second portion of the substrate, but not removing the electrical isolation. This creates a structure having a substrate, a passivation layer on the substrate, and at least one electroplated, metal region on the substrate such that there is contiguous contact between the metal region and the passivation layer. And, after an additional flip-chip assembly to a bond pad/heat sinking chip, results in a device having a bond pad chip having bond pads, solder beads formed on the bond pads, and a component connected to the bond pads by the solder beads. Wherein, the component has a substrate, a passivation layer on the substrate, and at least one electroplated, metal region on the substrate such that there is contiguous contact between the metal region and the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.