Compound semiconductor device and method of manufacturing the same
US9099351B2 · kind B2 · utility
11Cited by
4References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 16, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Aug 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor device includes as compound semiconductor layers: a first layer; a second layer larger in band gap than the first layer, formed above the first layer; a third layer having a p-type conductivity type, formed above the second layer; a gate electrode formed above the second layer via the third layer; a fourth layer larger in band gap than the second layer, formed to be in contact with the third layer above the second layer; and a fifth layer smaller in band gap than the fourth layer, formed to be in contact with the third layer above the fourth layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.