Semiconductor device
US9099447B2 · kind B2 · utility
6Cited by
4References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 24, 2012 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Oct 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of the impurity diffusion region, is used for electrically coupling the impurity diffusion region to the potential supply interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.