Integrated circuit with ion sensitive sensor and manufacturing method
US9099486B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Sep 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is an integrated circuit comprising a substrate (10) carrying plurality of circuit elements (20); a metallization stack (30) over said substrate for providing interconnections to at least some of said circuit elements, the metallization stack comprising a plurality of patterned metal layers (31) spatially separated from each other by respective electrically insulating layers (32), at least some of said electrically insulating layers comprising conductive portions (33) that electrically interconnect portions of adjacent metal layers, wherein at least one of the patterned metallization layers comprises a plurality of ion-sensitive electrodes (34), each ion-sensitive electrode being electrically connected to at least one of said circuit elements, a plurality of sample volumes (50) extending into said metallization stack, each sample volume terminating at one of said ion-sensitive electrodes; and an ion-sensitive layer lining at least the ion-sensitive electrodes in said sample volumes. A method of manufacturing such an IC is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.