Selective nanotube growth inside vias using an ion beam
US9099537B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Aug 28, 2009 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Mar 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.