Semiconductor device
US9099557B2 · kind B2 · utility
0Cited by
4References
12Claims
0Family size
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Key dates
| Filing date | Sep 26, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.