Patent · US Active

LEDs with efficient electrode structures

US9099613B2 · kind B2 · utility

0Cited by
53References
7Claims
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Key dates

Filing dateAug 11, 2014
Grant dateAug 4, 2015
Priority date
Expiry dateAug 11, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857

Abstract

Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.