Semiconductor light emitting device and package
US9099624B2 · kind B2 · utility
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Key dates
| Filing date | Nov 14, 2012 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Jan 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
Abstract
A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.