Phase change memory and method of fabricating the phase change memory

US9099637B2 · kind B2 · utility

Assignee

• INTELLECTUAL DISCOVERY CO., LTD. · KR

Inventor

• Yun Heub Song · Seongnam-si, KR

Key dates

• Filing date: Mar 28, 2014
• Grant date: Aug 4, 2015
• Expiry date: Mar 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/883

Abstract

Provided is a phase change memory, including: at least one wiring layer each including a first conductive layer and a phase change layer horizontally disposed on the first conductive layer; a heater layer disposed to vertically contact with the at least one wiring layer; and a second conductive layer disposed to contact with the heater layer in parallel therewith, and through which current flows from at least one electrode into the at least one wiring layer. The phase change layer may be made of a phase change material and may have a thickness less than a thickness of the first conductive layer.