Method of etching a magnesium oxide film
US9099643B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Feb 26, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Dec 8, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetoresistive device includes an MR element including a metal layer, and an insulating portion made of magnesium oxide and in contact with the MR element. A method of manufacturing the magnetoresistive device includes the step of removing an unwanted magnesium oxide film that is formed by the magnesium oxide in the process of forming the insulating portion. In this step, the unwanted magnesium oxide film is wet etched by using an etchant containing an aqueous ammonia solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.