Manufacturing method of non-volatile storage device, and non-volatile storage device
US9099646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Jul 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A manufacturing method includes forming a laminated body on a substrate. A mask layer is formed on the laminated body, and then a portion of the mask layer is removed to form an opening. Then, using the mask layer as a template, a first portion of the laminated body is removed to expose a portion of the substrate beneath the laminated body. The substrate is processed to alter the ratio between the size of mask opening and the removed first portion. A variable resistance layer is then deposited on exposed portions of the mask layer, the laminated body, and the substrate. Then the variable resistance layer is processed to remove at least a portion covering the substrate to permit contact with the underlying substrate. A second electrode layer is deposited to fill the removed portions of the laminated body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.