Semiconductor driver circuit and power conversion device
US9100019B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Feb 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/066
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a power conversion device provided with a power semiconductor device and a semiconductor driver circuit for driving the power semiconductor device, false firing can be prevented, and improvement in reliability can be achieved. The power conversion device is provided with: a first switch element inserted between a power supply voltage and an output node; a second switch element inserted between a ground power supply voltage and the output node; and a gate driver circuit for controlling turning ON/OFF of the second switch element. When the second switch element is controlled to be turned OFF, the gate driver circuit drives a gate-source voltage at, for example, a level of 0 V. However, when the first switch element is shifted from an OFF state to an ON state at a first timing in a state that the gate-source voltage is driven at, for example, the level of 0 V, the gate driver circuit temporarily applies a level of a negative voltage as the gate-source voltage during a first period which crosses over the first timing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.