Process for modifying the properties of a thin layer and substrate applying said process
US9102518B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2009 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Jan 13, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilized in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterized in that it consists of: forming at least one thin layer (1) on a nanostructured support with high specific surface (2), and treating the nanostructured support with high specific surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.