Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same
US9103000B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Nov 23, 2010 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Oct 5, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/77
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.