Pattern tone reversal
US9105295B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | May 31, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for patterning a substrate is disclosed. Depressions are patterned into a resist layer over a substrate. A mask layer is deposited over the resist layer at least partially filling the depressions. The mask layer is etched to expose a top surface of the resist layer and leaving at least a portion of the mask layer in the depressions of the resist layer, wherein the mask layer over said top surface of the resist layer is etched at a faster rate than said mask layer in the depressions of the resist layer. Exposed portions of the resist layer are removed to expose portions of the substrate. Exposed portions of the substrate are etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.