Controlling the voltage level on the word line to maintain performance and reduce access disturbs
US9105315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2012 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Oct 8, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/413
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory storage device for storing data including: a plurality of storage cells, each storage cell including an access control device configured to provide the storage cell with access to or isolation from a data access port in response to an access control signal. Access control circuitry includes: access switching circuitry configured to connect a selected access control line to a voltage source; and feedback circuitry configured to feedback a change in voltage on the access control line to the access switching circuitry. The access control circuitry is configured to respond to a data access request signal to access a selected storage cell connected to a corresponding selected access control line in response to the feedback circuitry providing a feedback signal indicating that the access control line voltage has attained a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.