Forming a characterization parameter of a resistive memory element
US9105360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2013 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Oct 22, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a respective minimum programming time or minimum programming voltage step of a resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first resistance of the memory element in response to the signal; and c) measuring a second resistance of the memory element after a time period has elapsed from the measurement of the first resistance with no programming signal applied. In response to the first and second resistance measurements of the characterization procedure, a characterization parameter of the memory element is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.