High frequency inductor structure having increased inductance density and quality factor
US9105381B2 · kind B2 · utility
1Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2012 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Dec 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F2017/0086
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is an inductor structure. The inductor structure includes a base material, a plurality of bottom spiral conductors disposed on the base material, and at least one top spiral conductor disposed on the at least one bottom spiral conductor, and dielectric material separating the bottom, middle and top spiral conductors. A current path for high frequency operation is disclosed. Also disclosed is a method for determining the number of turns in the at least one top spiral conductor and the at least one bottom spiral conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.