Etching apparatus and etching method
US9105452B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2014 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Mar 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32715
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.