Semiconductor device

US9105470B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Gerhard Noebauer · Villach, AT
• Christoph Kadow · Gauting, DE
• Donald Dibra · Munich, DE
• Robert Illing · Finkenstein, AT

Key dates

• Filing date: Apr 10, 2014
• Grant date: Aug 11, 2015
• Expiry date: Apr 10, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/601

Abstract

A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line.