Field effect transistor, display element, image display device, and system
US9105473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2011 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | May 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A disclosed field effect transistor includes a gate electrode to which a gate voltage is applied, a source electrode and a drain electrode for acquiring a current in response to the gate voltage, an active layer provided adjacent to the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor, and a gate insulator layer provided between the gate electrode and the active layer. In the field effect transistor, the n-type oxide semiconductor is formed of an n-type doped compound having a chemical composition of a crystal phase obtained by introducing at least one of a trivalent cation, a tetravalent cation, a pentavalent cation and a hexavalent cation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.