Methods for the fabrication of graphene nanoribbon arrays using block copolymer lithography
US9105480B2 · kind B2 · utility
1Cited by
0References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Jul 21, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2204/065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating patterned substrates, including patterned graphene substrates, using etch masks formed from self-assembled block copolymer films are provided. Some embodiments of the methods are based on block copolymer (BCP) lithography in combination with graphoepitaxy. Some embodiments of the methods are based on BCP lithography techniques that utilize hybrid organic/inorganic etch masks derived from BCP templates. Also provided are field effect transistors incorporating graphene nanoribbon arrays as the conducting channel and methods for fabricating such transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.