HBT cascode cell
US9105604B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 6, 2014 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Jan 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cascode gain stage apparatus includes a common-emitter connected transistor having a first base metal contact, first emitter metal contact, a first collector metal contact and a u-shaped first collector interface metal; and a common-base connected transistor having a second emitter metal contact, a second base metal contact, and a second collector metal contact, the second emitter metal contact in communication with the first collector metal contact through a transistor interconnect metallic strap, the second emitter metal contact disposed between the first collector metal contact and the second base metal contact. With this configuration, the first collector metal contact and second emitter metal contact are connected by the transistor interconnect metallic strap without high-aspect ratio traces to reduce crossover coupling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.