Method for reducing defects in shallow trench isolation
US9105687B1 · kind B1 · utility
4Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2014 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Apr 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a trench that includes a needle defect, depositing a high density plasma oxide over the trench including the needle defect, removing the part of the high density oxide and the liner oxide over the needle defect by applying an oxide etch, and after the step of applying the oxide etch, etching back the needle defect by applying a polysilicon etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.