Transistors from vertical stacking of carbon nanotube thin films
US9105702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2012 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Sep 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A carbon nanotube field-effect transistor is disclosed. The carbon nanotube field-effect transistor includes a first carbon nanotube film, a first gate layer coupled to the first carbon nanotube film and a second carbon nanotube film coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first carbon nanotube film as well as to influence an electric field of the second carbon nanotube film. At least one of a source contact and a drain contact are coupled to the first and second carbon nanotube film and are separated from the first gate layer by an underlap region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.