Semiconductor light emitting device and manufacturing method thereof
US9105762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2015 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.