Patent · US Active

Preparation of CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks

US9105798B2 · kind B2 · utility

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Key dates

Filing dateMay 14, 2013
Grant dateAug 11, 2015
Priority date—
Expiry dateMay 29, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A method of preparing Cu(In,Ga)SSe2 Cu(In,Ga) (S,Se)2 (CIGSS) absorber layers uses coated semiconductor nanoparticle and nanowire networks. The nanoparticles and nanowires containing one or more elements from group IB and/or IIIA and/or VIA are prepared from metal salts such as metal chloride and acetate at room temperature without inert gas protection. A uniform and non-aggregation CIGS precursor layer is fabricated with the formation of nanoparticle and nanowire networks utilizing ultrasonic spaying technique. High quality CIGSS film is obtained by cleaning the residue salts and carbon agents at an increased temperature and selenizing the pretreated precursor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.