Patent · US Active

LEDs with efficient electrode structures

US9105815B2 · kind B2 · utility

2Cited by
53References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 11, 2012
Grant dateAug 11, 2015
Priority date
Expiry dateNov 11, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857

Abstract

Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.