Nonvolatile variable resistive device
US9105838B2 · kind B2 · utility
16Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2011 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Mar 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a first electrode includes a metal element. A second electrode includes a semiconductor element. A third electrode includes a metal element. A first variable resistive layer is arranged between the first electrode and the second electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the first electrode. A second variable resistive layer is arranged between the second electrode and the third electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the third electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.