Solidification of high quality alloy semiconductors
US9109299B1 · kind B1 · utility
1Cited by
5References
28Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 30, 2011 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | May 4, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An alloy semiconductor can be grown using a container including a lower section containing a composition-control source material and an upper section containing a solid. The composition-control source material is heated to produce a vapor, and the solid charge is melted to form a melt with a melt meniscus extending to an inner surface of the container. The vaporized composition-control source material flows from the lower section to the upper and contacts the melt meniscus. The melt is then cooled to form a crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.