Field effect transistor-based bio-sensor
US9110014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2014 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Dec 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.