Resistive switching memory device and method for operating the same
US9111614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Dec 21, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive switching memory device and a method for operating the same are disclosed. The device includes a plurality of resistive switching memory units arranged in a matrix, each of which includes a switching element and a resistive switching device, and the switching element being connected to a word line at its control terminal, to the resistive switching device at one terminal, and to a bit line at the other terminal; a word line decoder adapted to decode an input address signal to switch on the switching element in at least one of resistive switching memory units; and a driving circuit adapted to apply a voltage pulse whose front edge changes slowly across the resistive switching device by the bit line synchronously with the switching-on of the switching element. Using the scheme of the above embodiments, the durability characteristic of the resistive switching device can be improved, such as degradation of high-low resistance value window and the failure of the device with transition times can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.