Thin film capacitor
US9111681B2 · kind B2 · utility
2Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Oct 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.