Semiconductor devices, methods of manufacture thereof, and methods of forming resistors
US9111768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2014 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Sep 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, methods of manufacture thereof, and methods of forming resistors are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a first insulating material over a workpiece, and forming a conductive chemical compound material over the first insulating material. The conductive chemical compound material is patterned to form a resistor. A second insulating material is formed over the resistor, and the second insulating material is patterned. The patterned second insulating material is filled with a conductive material to form a first contact coupled to a first end of the resistor and to form a second contact coupled to a second end of the resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.