Semiconductor devices with self-aligned source drain contacts and methods for making the same
US9111783B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Apr 10, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Apr 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Replacement metal gates well suited for self-aligned contact formation are made by replacing the dummy gate with a recessed polysilicon layer and then effecting an aluminum-polysilicon substitution. The resulting upper polysilicon layer is easily removed from the recessed aluminum layer, which can then be protected with a protective dielectric layer for subsequent formation of a source or drain contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.