Method of manufacturing solid-state imaging device and solid-state imaging device
US9111833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Nov 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
According to one embodiment, a method of manufacturing a solid-state imaging device includes a trench forming process, a concave portion forming process, a coating process, and a burying process. In the trench forming process, a trench is formed at the position to isolate a plurality of photoelectric conversion elements. In the concave portion forming process, a concave portion is formed at the position to form a light shielding film of shielding at least part of subject light incident on an adjustment photoelectric conversion element used for an image quality adjustment of an imaged image. In the coating process, inner circumferential surfaces of the trench and the concave portion are coated with an insulating film. In the burying process, a light shielding member is buried inside the trench and the concave portion whose inner circumferential surface are coated with the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.