Non-volatile semiconductor memory device and method for manufacturing the same
US9111858B2 · kind B2 · utility
3Cited by
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13Claims
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | May 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A non-volatile semiconductor memory device includes a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein the memory cell includes a current rectifying element and a variable resistance element, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.