Semiconductor apparatus and manufacturing method thereof
US9111862B2 · kind B2 · utility
0Cited by
2References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Mar 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus and a manufacturing method therefor is described. The semiconductor apparatus comprises a substrate and a gate structure for a N-channel semiconductor device above the substrate. A recess is formed at a lower end portion of at least one of two sides of the gate where it is adjacent to a source region and a drain region, of the N-channel semiconductor. The channel region of the N-channel semiconductor device has enhanced strain. The apparatus can further have a gate structure for a P-channel semiconductor device above the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.