Power semiconductor device and method for producing a power semiconductor device

US9111900B2 · kind B2 · utility

Assignee

• SEMIKRON ELEKTRONIK GMBH & CO. KG · DE

Inventors

• Ingo Bogen · Nuremberg, DE
• Markus Beck · Scotts Valley, US
• Hartmut Kulas · Ebermannstadt, DE
• Alexander Popescu · Bad Mergentheim, DE
• Reinhard Helldorfer · Schwabach, DE

Key dates

• Filing date: Sep 3, 2014
• Grant date: Aug 18, 2015
• Expiry date: Sep 3, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/20104
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor device comprising a power semiconductor module and a heat sink and a method for its manufacture. The heat sink has a first cooling housing component, with a cutout passing therethrough, and a second cooling housing component, with a cooling plate arranged in the cutout. The first and second cooling housing components are configured and arranged relative to one another so that a cavity is formed at the side of the cooling plate facing away from the power semiconductor components. The cooling plate is connected to the first cooling housing component by a first weld seam which extends circumferentially therearound. The first weld seam seals the cooling plate in relation to the first cooling housing component, and the second cooling housing component is connected to the first cooling housing component. The inventive power semiconductor device has good heat conduction from the power semiconductor components to a heat sink.