Integrated circuit devices with capacitor and methods of manufacturing the same
US9111953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Mar 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
An integrated circuit device with capacitors and methods of forming the integrated circuit device are provided. The methods may include forming a first lower capacitor electrode pattern on an inner surface of a hole in a mold layer. The first lower capacitor electrode pattern may have a hollow cylindrical shape and an opening in an upper surface. The method may further include forming a second lower capacitor electrode pattern plugging the opening and an upper surface of the second lower capacitor electrode pattern may be planar. The first and the second lower capacitor electrode patterns may comprise a lower capacitor electrode including a void. Additionally, the method may include removing the mold layer to expose the lower capacitor electrode, forming a dielectric layer on the lower capacitor electrode, and forming an upper capacitor electrode layer on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.