Patent · US Active

Apparatus for the heat treatment of disc shaped substrates

US9111970B2 · kind B2 · utility

0Cited by
7References
43Claims
0Family size

Inventors

Key dates

Filing dateMar 2, 2009
Grant dateAug 18, 2015
Priority date
Expiry dateJan 22, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67017
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes. The collar ring surrounds the hole region and has at least one inlet opening. The first gas conveyance duct has an outlet which is aligned with the inlet opening of the collar ring…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.