Semiconductor device and method of fabricating the same
US9111994B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2011 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Apr 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a multi-depth trench is formed, the multi-depth trench including a shallow trench and a deep trench arranged below the shallow trench, a first dielectric material formed in partial area of the multi-depth trench, the first dielectric material including a slope in the shallow trench that extends upward from a corner where a bottom plane of the shallow trench and a sidewall of the deep trench meets, the slope being inclined with respect to the bottom plane of the shallow trench, and a second dielectric material formed in areas of the multi-depth trench in which the first dielectric material is absent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.