Semiconductor device
US9112037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.