Field-effect transistor, display element, image display device, and system
US9112039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2014 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Jun 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/875
Abstract
A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.