Amorphous oxide thin film transistor, method for manufacturing the same, and display panel
US9112040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Mar 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosed technology provide an amorphous oxide thin film transistor (TFT), a method for preparing an amorphous oxide TFT, and a display panel. The amorphous oxide thin film transistor includes: a gate electrode, a gate insulating layer, a semiconductor active layer, a source electrode and a drain electrode. The semiconductor active layer comprises a channel layer and an ohmic contact layer, and the channel layer has a greater content of oxygen than the ohmic contact layer; the channel layer contacts the gate insulating layer, and the ohmic contact layer comprises two separated ohmic contact regions, one of which contacts the source electrode and the other of which contacts the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.