High efficiency broadband semiconductor nanowire devices

US9112085B2 · kind B2 · utility

Assignee

• The Royal Institution for the Advancement of Learning/McGill University · CA

Inventors

• Zetian Mi · Westmount, CA
• Md Golam Kibria · Montréal, CA

Key dates

• Filing date: Apr 19, 2013
• Grant date: Aug 18, 2015
• Expiry date: Apr 19, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Metal-nitride nanowires are amongst the candidates for very high efficiency electronics, solid state light sources, photovoltaics, photoelectrochemical devices, and photobiological devices. Enhanced performance typically requires heterostructures, quantum dots, etc within structures that are grown with relatively few defects and in a controllable reproducible manner. Additionally device design flexibility requires that the nanowire at the substrate be either InN or GaN. Methods of growing relatively defect free nanowires and associated structures for group IIIA-nitrides are presented without foreign metal catalysts thereby overcoming the non-uniform growth of prior art techniques and allowing self-organizing quantum dot, quantum well and quantum dot-in-a-dot structures to be formed, thereby supporting variety of high efficiency devices.