Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
US9112111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Dec 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×1020 cm−3 and not more than 3×1020 cm−3. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×1018 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.